SI7223DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 32.01 грн |
| 6000+ | 28.69 грн |
| 9000+ | 27.60 грн |
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Технічний опис SI7223DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm, Verlustleistung, p-Kanal: 23W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 23W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SI7223DN-T1-GE3 за ціною від 22.98 грн до 119.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI7223DN-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 |
на замовлення 23035 шт: термін постачання 21-30 дні (днів) |
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SI7223DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 6A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
на замовлення 14311 шт: термін постачання 21-31 дні (днів) |
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SI7223DN-T1-GE3 | VISHAY |
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm Verlustleistung, p-Kanal: 23W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 23W Betriebstemperatur, max.: 150°C |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SI7223DN-T1-GE3 | VISHAY |
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm Verlustleistung, p-Kanal: 23W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 23W Betriebstemperatur, max.: 150°C SVHC: No SVHC (04-Feb-2026) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| SI7223DN-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8
MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8
на замовлення 23035 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 58.68 грн |
| 100+ | 34.54 грн |
| 500+ | 29.96 грн |
| 1000+ | 25.59 грн |
| 3000+ | 23.61 грн |
| 6000+ | 22.98 грн |
| SI7223DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 14311 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 73.00 грн |
| 100+ | 48.80 грн |
| 500+ | 36.05 грн |
| 1000+ | 32.91 грн |
| SI7223DN-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm
Verlustleistung, p-Kanal: 23W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 23W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm
Verlustleistung, p-Kanal: 23W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 23W
Betriebstemperatur, max.: 150°C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| SI7223DN-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm
Verlustleistung, p-Kanal: 23W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 23W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI7223DN-T1-GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A, 0.022 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.022ohm
Verlustleistung, p-Kanal: 23W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.022ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 23W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)