SI7252DP-T1-GE3 Vishay Semiconductors
на замовлення 34836 шт:
термін постачання 573-582 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 159.27 грн |
10+ | 140.15 грн |
100+ | 98.56 грн |
500+ | 81.24 грн |
1000+ | 73.25 грн |
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Технічний опис SI7252DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 36.7A, Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V, Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Інші пропозиції SI7252DP-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI7252DP-T1-GE3 Код товару: 122330 |
Мікросхеми > Інші мікросхеми |
товар відсутній
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SI7252DP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI7252DP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R |
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SI7252DP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SI7252DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
товар відсутній |
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SI7252DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
товар відсутній |
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SI7252DP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |