SI7315DN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
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Технічний опис SI7315DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8.
Інші пропозиції SI7315DN-T1-GE3 за ціною від 33.74 грн до 120.19 грн
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SI7315DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 8.9A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V |
на замовлення 3102 шт: термін постачання 21-31 дні (днів) |
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SI7315DN-T1-GE3 | Vishay / Siliconix |
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8 |
на замовлення 26214 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SI7315DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
на замовлення 3102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.19 грн |
| 10+ | 73.98 грн |
| 100+ | 49.69 грн |
| 500+ | 36.86 грн |
| 1000+ | 33.74 грн |
| SI7315DN-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8
на замовлення 26214 шт:
термін постачання 21-30 дні (днів)