Технічний опис SI7374DP-T1-E3 Vishay Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 24A, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET + Schottky, Case: PowerPAK® SO8, Technology: TrenchFET®, Gate charge: 122nC, On-state resistance: 6.6mΩ, Gate-source voltage: ±20V, Drain current: 24A, Drain-source voltage: 30V, Power dissipation: 56W, Pulsed drain current: 100A, Polarisation: unipolar, Kind of package: reel; tape.
Інші пропозиції SI7374DP-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI7374DP-T1-E3 | Виробник : Vishay / Siliconix |
 MOSFET 30V 24A 56W 5.5mohm @ 10V |
товару немає в наявності |
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| SI7374DP-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 24A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET + Schottky Case: PowerPAK® SO8 Technology: TrenchFET® Gate charge: 122nC On-state resistance: 6.6mΩ Gate-source voltage: ±20V Drain current: 24A Drain-source voltage: 30V Power dissipation: 56W Pulsed drain current: 100A Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |