| Кількість | Ціна |
|---|---|
| 3+ | 145.94 грн |
| 10+ | 119.74 грн |
| 100+ | 83.16 грн |
| 500+ | 69.88 грн |
| 1000+ | 64.22 грн |
Відгуки про товар
Написати відгук
Технічний опис SI7454DP-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 5A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V.
Інші пропозиції SI7454DP-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SI7454DP-T1-E3 | Виробник : Vishay |
 Trans MOSFET N-CH 100V 5A 8-Pin PowerPAK SO T/R |
товару немає в наявності |
|
|
|
SI7454DP-T1-E3 | Виробник : Vishay |
Trans MOSFET N-CH 100V 5A 8-Pin PowerPAK SO T/R |
товару немає в наявності |
|
| SI7454DP-T1-E3 | Виробник : Vishay Siliconix |
N-Channel 100V 5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
||
 |
SI7454DP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 5A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
товару немає в наявності |
|
|
|
SI7454DP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 5A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
товару немає в наявності |
|
| SI7454DP-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.8A Pulsed drain current: 30A Power dissipation: 4.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |