SI7455DP-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 80V 28A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).