SI7461DP-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SI7461DP-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SI7461DP-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SI7461DP-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 8.6A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI7461DP-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. |
| SI7461DP-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.6A Pulsed drain current: -60A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SI7461DP-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SI7461DP-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SI7461DP-T1-E3 |
|
Виробник: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
MOSFETs -60V Vds 20V Vgs PowerPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SI7461DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.6A
Pulsed drain current: -60A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.6A
Pulsed drain current: -60A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI7461DP-T1-E3 |
|
Виробник: Vishay
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 60V 8.6A 8-Pin PowerPAK SO EP T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.