| Кількість | Ціна |
|---|---|
| 3+ | 132.39 грн |
| 10+ | 108.61 грн |
| 100+ | 75.42 грн |
| 500+ | 63.36 грн |
| 1000+ | 60.83 грн |
| 3000+ | 60.76 грн |
| 6000+ | 48.49 грн |
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Технічний опис SI7469ADP-T1-RE3 Vishay / Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 73.5W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V.
Інші пропозиції SI7469ADP-T1-RE3 за ціною від 82.17 грн до 192.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI7469ADP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET P-CH 80V 7.4A/46A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V |
на замовлення 467 шт: термін постачання 21-31 дні (днів) |
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| SI7469ADP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
на замовлення 467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 192.68 грн |
| 10+ | 119.65 грн |
| 100+ | 82.17 грн |