Технічний опис SI7483ADP-T1-E3 VISHAY
Description: MOSFET P-CH 30V 14A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V.
Інші пропозиції SI7483ADP-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SI7483ADP-T1-E3 | Виробник : VISHAY |
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на замовлення 60 шт: термін постачання 14-28 дні (днів) |
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SI7483ADP-T1-E3 | Виробник : Vishay |
Trans MOSFET P-CH 30V 14A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SI7483ADP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 14A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V |
товар відсутній |
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SI7483ADP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 14A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V |
товар відсутній |