SI7501DN-T1-GE3
Виробник:
на замовлення 25500 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI7501DN-T1-GE3
Description: MOSFET N/P-CH 30V 5.4A 1212-8, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Common Drain, Mounting Type: Surface Mount, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Cut Tape (CT), Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 3V @ 250µA.
Інші пропозиції SI7501DN-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI7501DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 5.4A 1212-8 Drain to Source Voltage (Vdss): 30V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Configuration: N and P-Channel, Common Drain Mounting Type: Surface Mount FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Package / Case: PowerPAK® 1212-8 Dual Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
| SI7501DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.