SI7615CDN-T1-GE3 Vishay Semiconductors
на замовлення 26269 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.7 грн |
| 10+ | 32.32 грн |
| 100+ | 20.7 грн |
| 500+ | 16.29 грн |
| 1000+ | 12.15 грн |
| 3000+ | 11.55 грн |
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Технічний опис SI7615CDN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V.
Інші пропозиції SI7615CDN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI7615CDN-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET P-CH 20V 35A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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SI7615CDN-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 EP T/R |
товар відсутній |
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SI7615CDN-T1-GE3 | Виробник : Vishay |
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 EP T/R |
товар відсутній |
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| SI7615CDN-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Power dissipation: 21.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SI7615CDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V |
товар відсутній |
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| SI7615CDN-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Power dissipation: 21.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |