SI7621DN-T1-GE3 Vishay

Description: MOSFET P-CH 20V 4A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V, Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.