Технічний опис SI7634BDP-T1-E3 VISHAY
Description: MOSFET N-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V.
Інші пропозиції SI7634BDP-T1-E3
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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SI7634BDP-T1-E3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 22.5A 8-Pin PowerPAK SO T/R |
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| SI7634BDP-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI7634BDP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V |
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SI7634BDP-T1-E3 | Виробник : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
товар відсутній |
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| SI7634BDP-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A; 48W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 70A Power dissipation: 48W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |