SI7686DP-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 101.1 грн |
| 10+ | 81.02 грн |
| 100+ | 64.5 грн |
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Технічний опис SI7686DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V, Power Dissipation (Max): 5W (Ta), 37.9W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V.
Інші пропозиції SI7686DP-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI7686DP-T1-GE3 |
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на замовлення 33000 шт: термін постачання 14-28 дні (днів) |
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SI7686DP-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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| SI7686DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI7686DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Power Dissipation (Max): 5W (Ta), 37.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V |
товар відсутній |
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SI7686DP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 30V 35A 37.9W 9.5mohm @ 10V |
товар відсутній |
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| SI7686DP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Pulsed drain current: 50A Power dissipation: 37.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |