Si7726DN-T1-GE3
Виробник: на замовлення 25500 шт:
термін постачання 14-28 дні (днів)
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Технічний опис Si7726DN-T1-GE3
Description: MOSFET N-CH 30V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 15 V.
Інші пропозиції Si7726DN-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI7726DN-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R |
товар відсутній |
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SI7726DN-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R |
товар відсутній |
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| Si7726DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 35A Mounting: SMD Drain-source voltage: 30V Drain current: 35A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET + Schottky Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 кількість в упаковці: 3000 шт |
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Si7726DN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 15 V |
товар відсутній |
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Si7726DN-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 30V 35A 52W 9.5mohm @ 10V |
товар відсутній |
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| Si7726DN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 35A Mounting: SMD Drain-source voltage: 30V Drain current: 35A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET + Schottky Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 |
товар відсутній |