SI7852DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 80V 7.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V.