SI7904BDN-T1-GE3 Vishay Semiconductors

Description: MOSFET 2N-CH 20V 6A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8 Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 17.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8 Dual, Packaging: Tape & Reel (TR).