SI7923DN-T1-E3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 4+ | 99.39 грн |
| 10+ | 86.73 грн |
| 100+ | 63.89 грн |
| 250+ | 62.08 грн |
| 500+ | 54.68 грн |
| 1000+ | 46.85 грн |
| 3000+ | 45.04 грн |
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Технічний опис SI7923DN-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 30V 4.3A 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Інші пропозиції SI7923DN-T1-E3 за ціною від 53.02 грн до 119.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI7923DN-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 4.3A 1212-8Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Dual Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Packaging: Cut Tape (CT) |
на замовлення 1251 шт: термін постачання 21-31 дні (днів) |
|
| SI7923DN-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
на замовлення 1251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.41 грн |
| 10+ | 103.26 грн |
| 100+ | 83.00 грн |
| 500+ | 63.99 грн |
| 1000+ | 53.02 грн |