Технічний опис SI7946ADP-T1-GE3 VISHAY
Description: MOSFET 2N-CH 150V 7.7A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 19.8W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V, Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Інші пропозиції SI7946ADP-T1-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
SI7946ADP-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19.8W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
товару немає в наявності |
||
![]() |
SI7946ADP-T1-GE3 | Виробник : Vishay / Siliconix |
![]() |
товару немає в наявності |