SI7956DP-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 150V 2.6A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.