Технічний опис SI7960DP-T1-E3 Vishay
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Інші пропозиції SI7960DP-T1-E3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SI7960DP-T1-E3 | Виробник : Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 6.2A PPAK SO8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
товару немає в наявності |
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SI7960DP-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
товару немає в наявності |