SI8401DB-T1-E1 VISHAY
Виробник: VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A
Technology: TrenchFET®
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.77W
On-state resistance: 95mΩ
Pulsed drain current: -10A
Drain current: -4.9A
Polarisation: unipolar
Gate charge: 17nC
Drain-source voltage: -20V
Gate-source voltage: ±12V
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис SI8401DB-T1-E1 VISHAY
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V.
Інші пропозиції SI8401DB-T1-E1
| Фото | Назва | Виробник | Інформація |
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SI8401DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V |
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SI8401DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V |
товар відсутній |
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SI8401DB-T1-E1 | Виробник : Vishay / Siliconix |
MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V |
товар відсутній |
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| SI8401DB-T1-E1 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 95mΩ Pulsed drain current: -10A Drain current: -4.9A Polarisation: unipolar Gate charge: 17nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
товар відсутній |