SI8401DB-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 20V 3.6A 4MICROFOOT, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 4-Microfoot, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 1.47W (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, CSPBGA, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V.