Технічний опис SI8413DB-T1-E1 Vishay / Siliconix
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V.
Інші пропозиції SI8413DB-T1-E1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI8413DB-T1-E1 |
 |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
|||
| SI8413DB-T1-E1 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.5A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 63mΩ Pulsed drain current: -25A Drain current: -6.5A Polarisation: unipolar Gate charge: 21nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
||
 |
SI8413DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V |
товар відсутній |
|
|
|
SI8413DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V |
товар відсутній |
|
| SI8413DB-T1-E1 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.5A; Idm: -25A Technology: TrenchFET® Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.77W On-state resistance: 63mΩ Pulsed drain current: -25A Drain current: -6.5A Polarisation: unipolar Gate charge: 21nC Drain-source voltage: -20V Gate-source voltage: ±12V Type of transistor: P-MOSFET |
товар відсутній |