SI8424DB-T1-E1
Виробник:
на замовлення 3302 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI8424DB-T1-E1
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V, Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V.
Інші пропозиції SI8424DB-T1-E1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI8424DB-T1-E1 | Виробник : Vishay |
 Trans MOSFET N-CH Si 8V 12.2A 4-Pin Micro Foot T/R |
товару немає в наявності |
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SI8424DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V |
товару немає в наявності |
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SI8424DB-T1-E1 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V |
товару немає в наявності |