SI8425DB-T1-E1 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 7+ | 52.55 грн |
| 10+ | 36.30 грн |
| 100+ | 21.51 грн |
| 500+ | 17.81 грн |
| 1000+ | 15.36 грн |
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Технічний опис SI8425DB-T1-E1 Vishay Semiconductors
Description: MOSFET P-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-WLCSP (1.6x1.6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V.
Інші пропозиції SI8425DB-T1-E1 за ціною від 17.34 грн до 56.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI8425DB-T1-E1 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-WLCSP (1.6x1.6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V |
на замовлення 2862 шт: термін постачання 21-31 дні (днів) |
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| SI8425DB-T1-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
на замовлення 2862 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.56 грн |
| 10+ | 38.05 грн |
| 100+ | 25.92 грн |
| 500+ | 20.21 грн |
| 1000+ | 17.34 грн |