SI8441DB-T2-E1 Vishay Siliconix

Description: MOSFET P-CH 20V 10.5A 6MICROFOOT, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: 6-Micro Foot™ (1.5x1), Vgs(th) (Max) @ Id: 700mV @ 250µA, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, Packaging: Tape & Reel (TR).