Інші пропозиції SI8483DB-T2-E1 за ціною від 11.00 грн до 51.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI8483DB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 16A 6MICRO FOOTInput Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-Micro Foot™ (1.5x1) Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA Packaging: Tape & Reel (TR) FET Type: P-Channel |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SI8483DB-T2-E1 | Vishay Semiconductors |
MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 |
на замовлення 45924 шт: термін постачання 21-30 дні (днів) |
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SI8483DB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 16A 6MICRO FOOTPackage / Case: 6-UFBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-Micro Foot™ (1.5x1) Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 16799 шт: термін постачання 21-31 дні (днів) |
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| SI8483DB-T2-E1 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
FET Type: P-Channel
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
FET Type: P-Channel
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.39 грн |
| 6000+ | 12.47 грн |
| 9000+ | 12.05 грн |
| 15000+ | 11.11 грн |
| SI8483DB-T2-E1 |
![]() |
Виробник: Vishay Semiconductors
MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1
на замовлення 45924 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 31.82 грн |
| 15+ | 23.10 грн |
| 100+ | 18.33 грн |
| 500+ | 15.01 грн |
| 1000+ | 13.39 грн |
| 3000+ | 11.07 грн |
| 6000+ | 11.00 грн |
| SI8483DB-T2-E1 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 12V 16A 6MICRO FOOT
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 16799 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.54 грн |
| 10+ | 32.37 грн |
| 100+ | 23.18 грн |
| 500+ | 17.30 грн |
| 1000+ | 15.58 грн |




