SI8489EDB-T2-E1 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 9+ | 38.15 грн |
| 13+ | 25.29 грн |
| 100+ | 17.13 грн |
| 500+ | 13.39 грн |
| 1000+ | 11.28 грн |
| 3000+ | 10.43 грн |
| 6000+ | 9.73 грн |
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Технічний опис SI8489EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 20V 4MICROFOOT, Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: 4-Microfoot, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції SI8489EDB-T2-E1 за ціною від 13.11 грн до 43.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI8489EDB-T2-E1 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 4MICROFOOTOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 2642 шт: термін постачання 21-31 дні (днів) |
|
| SI8489EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 20V 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 2642 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 10+ | 30.70 грн |
| 100+ | 21.16 грн |
| 500+ | 15.11 грн |
| 1000+ | 13.11 грн |