Технічний опис SI8805EDB-T2-E1 Vishay / Siliconix
Description: MOSFET P-CH 8V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, CSPBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 4-Microfoot, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V.
Інші пропозиції SI8805EDB-T2-E1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI8805EDB-T2-E1 | Виробник : Vishay |
 Trans MOSFET P-CH 8V 2.2A 4-Pin Micro Foot T/R |
товару немає в наявності |
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SI8805EDB-T2-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 8V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V |
товару немає в наявності |
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SI8805EDB-T2-E1 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 8V 4MICROFOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 4-Microfoot Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V |
товару немає в наявності |