SI8812DB-T2-E1 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 9+ | 36.76 грн |
| 13+ | 25.37 грн |
| 100+ | 16.49 грн |
| 500+ | 12.55 грн |
| 1000+ | 10.71 грн |
| 3000+ | 10.22 грн |
| 6000+ | 10.01 грн |
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Технічний опис SI8812DB-T2-E1 Vishay Semiconductors
Description: MOSFET N-CH 20V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V.
Інші пропозиції SI8812DB-T2-E1 за ціною від 10.86 грн до 37.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI8812DB-T2-E1 | Vishay Siliconix |
 Description: MOSFET N-CH 20V 4MICROFOOTGate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA Packaging: Cut Tape (CT) |
на замовлення 2683 шт: термін постачання 21-31 дні (днів) |
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| SI8812DB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
на замовлення 2683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.27 грн |
| 13+ | 23.98 грн |
| 100+ | 16.31 грн |
| 500+ | 11.96 грн |
| 1000+ | 10.86 грн |