SI8819EDB-T2-E1 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 11+ | 30.14 грн |
| 14+ | 23.69 грн |
| 100+ | 10.82 грн |
| 500+ | 9.99 грн |
| 1000+ | 8.45 грн |
| 3000+ | 7.05 грн |
| 6000+ | 6.98 грн |
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Технічний опис SI8819EDB-T2-E1 Vishay Semiconductors
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT, Package / Case: 4-XFBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції SI8819EDB-T2-E1 за ціною від 9.40 грн до 41.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8819EDB-T2-E1 | Vishay Siliconix |
 Description: MOSFET P-CH 12V 2.9A 4MICRO FOOTPackage / Case: 4-XFBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SI8819EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V |
на замовлення 5800 шт: термін постачання 21-31 дні (днів) |
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| SI8819EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.40 грн |
| SI8819EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.63 грн |
| 13+ | 24.89 грн |
| 100+ | 15.81 грн |
| 500+ | 11.18 грн |
| 1000+ | 10.00 грн |