Si8823EDB-T2-E1 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 10.84 грн |
| 6000+ | 9.53 грн |
| 9000+ | 9.07 грн |
| 15000+ | 8.03 грн |
| 21000+ | 7.74 грн |
| 30000+ | 7.46 грн |
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Технічний опис Si8823EDB-T2-E1 Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V, Power Dissipation (Max): 900mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 4-MICRO FOOT® (0.8x0.8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V.
Інші пропозиції Si8823EDB-T2-E1 за ціною від 8.81 грн до 48.76 грн
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Si8823EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Power Dissipation (Max): 900mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V |
на замовлення 38802 шт: термін постачання 21-31 дні (днів) |
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Si8823EDB-T2-E1 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs MICRO FOOT |
на замовлення 16538 шт: термін постачання 21-30 дні (днів) |
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| Si8823EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 900mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V
на замовлення 38802 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 11+ | 28.10 грн |
| 100+ | 18.00 грн |
| 500+ | 12.80 грн |
| 1000+ | 11.47 грн |
| Si8823EDB-T2-E1 |
|
Виробник: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs MICRO FOOT
MOSFETs -20V Vds 8V Vgs MICRO FOOT
на замовлення 16538 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.76 грн |
| 11+ | 29.83 грн |
| 100+ | 16.56 грн |
| 500+ | 12.55 грн |
| 1000+ | 11.28 грн |
| 3000+ | 9.59 грн |
| 6000+ | 8.81 грн |