Технічний опис SI8901EDB-T2-E1 VISHAY
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 6-MICRO FOOT®CSP, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.5A, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 350µA, Supplier Device Package: 6-Micro Foot™ (2.36x1.56).
Інші пропозиції SI8901EDB-T2-E1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI8901EDB-T2-E1 | Vishay Siliconix |
 Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOTPackaging: Tape & Reel (TR) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 6-Micro Foot™ (2.36x1.56) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SI8901EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT Packaging: Cut Tape (CT) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 6-Micro Foot™ (2.36x1.56) |
товару немає в наявності |
В кошику од. на суму грн. |
| SI8901EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
товару немає в наявності
В кошику
од. на суму грн.
| SI8901EDB-T2-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
товару немає в наявності
В кошику
од. на суму грн.