Технічний опис SI8901EDB-T2-E1 VISHAY
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 6-MICRO FOOT®CSP, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.5A, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 350µA, Supplier Device Package: 6-Micro Foot™ (2.36x1.56).
Інші пропозиції SI8901EDB-T2-E1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI8901EDB-T2-E1 | Виробник : Vishay |
 Trans MOSFET P-CH Si 20V 3.5A 6-Pin Micro Foot T/R |
товару немає в наявності |
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SI8901EDB-T2-E1 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 6-Micro Foot™ (2.36x1.56) |
товару немає в наявності |
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SI8901EDB-T2-E1 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT Packaging: Cut Tape (CT) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 6-Micro Foot™ (2.36x1.56) |
товару немає в наявності |