SI8902AEDB-T2-E1 VISHAY
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 24V
Drain current: 11A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Mounting: SMD
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Drain-source voltage: 24V
Drain current: 11A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 3000 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SI8902AEDB-T2-E1 VISHAY
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A, Mounting: SMD, Power dissipation: 5.7W, Polarisation: unipolar, Kind of package: reel; tape, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 40A, Drain-source voltage: 24V, Drain current: 11A, On-state resistance: 37mΩ, Type of transistor: N-MOSFET x2, кількість в упаковці: 3000 шт.
Інші пропозиції SI8902AEDB-T2-E1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SI8902AEDB-T2-E1 | Виробник : Vishay Siliconix | Description: N-CHANNEL 24-V (D-S) MOSFET |
товар відсутній |
||
SI8902AEDB-T2-E1 | Виробник : Vishay Semiconductors | MOSFET 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6 |
товар відсутній |
||
SI8902AEDB-T2-E1 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A Mounting: SMD Power dissipation: 5.7W Polarisation: unipolar Kind of package: reel; tape Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 40A Drain-source voltage: 24V Drain current: 11A On-state resistance: 37mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |