SI9634DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 26.88 грн |
| 7500+ | 22.95 грн |
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Технічний опис SI9634DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 8A, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 3.6W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (07-Nov-2024).
Інші пропозиції SI9634DY-T1-GE3 за ціною від 29.97 грн до 102.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SI9634DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 3.6W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 35324 шт: термін постачання 21-31 дні (днів) |
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SI9634DY-T1-GE3 | Vishay / Siliconix |
MOSFETs SOIC8 2NCH 60V 6.2A |
на замовлення 5743 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI9634DY-T1-GE3 | VISHAY |
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 7351 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SI9634DY-T1-GE3 | VISHAY |
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8A Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 7351 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SI9634DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 60V 6.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 35324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.12 грн |
| 10+ | 61.95 грн |
| 50+ | 46.10 грн |
| 100+ | 38.44 грн |
| 500+ | 29.97 грн |
| SI9634DY-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs SOIC8 2NCH 60V 6.2A
MOSFETs SOIC8 2NCH 60V 6.2A
на замовлення 5743 шт:
термін постачання 21-30 дні (днів)
| SI9634DY-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 7351 шт:
термін постачання 21-31 дні (днів)
| SI9634DY-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SI9634DY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 8 A, 0.029 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 7351 шт:
термін постачання 21-31 дні (днів)