SIA432DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 5+ | 77.45 грн |
| 10+ | 60.72 грн |
| 100+ | 47.21 грн |
| 500+ | 37.56 грн |
| 1000+ | 30.59 грн |
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Технічний опис SIA432DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Інші пропозиції SIA432DJ-T1-GE3 за ціною від 27.47 грн до 95.73 грн
| Фото | Назва | Виробник | Інформація |
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SIA432DJ-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAK SC-70 |
на замовлення 8510 шт: термін постачання 21-30 дні (днів) |
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SIA432DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SC70-6Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
товару немає в наявності |
