SIA446DJ-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 7.7A PPAK SC70, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).