SIA456DJ-T3-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 5+ | 71.20 грн |
| 10+ | 62.39 грн |
| 100+ | 42.32 грн |
| 500+ | 34.98 грн |
| 1000+ | 27.65 грн |
| 2500+ | 26.60 грн |
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Технічний опис SIA456DJ-T3-GE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 1.1A/2.6A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції SIA456DJ-T3-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIA456DJ-T3-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 200V 1.1A/2.6A PPAKInput Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| SIA456DJ-T3-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 1.1A/2.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 1.1A/2.6A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.