SIA811ADJ-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 6+ | 60.94 грн |
| 10+ | 37.26 грн |
| 100+ | 20.95 грн |
| 500+ | 16.06 грн |
| 1000+ | 14.45 грн |
| 3000+ | 14.38 грн |
| 6000+ | 12.99 грн |
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Технічний опис SIA811ADJ-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: P-Channel.
Інші пропозиції SIA811ADJ-T1-GE3 за ціною від 15.25 грн до 61.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIA811ADJ-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 4.5A PPAK SC70-6Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Cut Tape (CT) |
на замовлення 2751 шт: термін постачання 21-31 дні (днів) |
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| SIA811ADJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
на замовлення 2751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.27 грн |
| 10+ | 36.46 грн |
| 100+ | 23.62 грн |
| 500+ | 16.94 грн |
| 1000+ | 15.25 грн |