SiA928DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
| Кількість | Ціна |
|---|---|
| 7+ | 49.42 грн |
| 11+ | 29.61 грн |
| 100+ | 19.08 грн |
| 500+ | 13.63 грн |
| 1000+ | 12.25 грн |
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Технічний опис SiA928DJ-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Інші пропозиції SiA928DJ-T1-GE3 за ціною від 10.81 грн до 58.08 грн
| Фото | Назва | Виробник | Інформація |
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SiA928DJ-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFETs Dual N-Ch 30V Vds 3nC Qg Typ |
на замовлення 8618 шт: термін постачання 21-30 дні (днів) |
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SiA928DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.5A PPAK8X8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
товару немає в наявності |
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| SiA928DJ-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 7.8W Case: PowerPAK® SC70 On-state resistance: 33mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |