SIA929DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
на замовлення 1696 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 40.34 грн |
10+ | 33.78 грн |
100+ | 23.36 грн |
500+ | 18.32 грн |
1000+ | 15.59 грн |
Відгуки про товар
Написати відгук
Технічний опис SIA929DJ-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V, Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Інші пропозиції SIA929DJ-T1-GE3 за ціною від 16.05 грн до 44.05 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIA929DJ-T1-GE3 | Виробник : Vishay Semiconductors | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 |
на замовлення 22578 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
SIA929DJ-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R |
товар відсутній |
||||||||||||||||||
SIA929DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 5W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
SIA929DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
товар відсутній |
||||||||||||||||||
SIA929DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 5W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |