SIB456DK-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.17 грн |
| 6000+ | 11.62 грн |
| 9000+ | 11.08 грн |
| 15000+ | 9.83 грн |
| 21000+ | 9.50 грн |
| 30000+ | 9.17 грн |
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Технічний опис SIB456DK-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V.
Інші пропозиції SIB456DK-T1-GE3 за ціною від 13.87 грн до 56.31 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIB456DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 6.3A PPAK SC75Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V |
на замовлення 60309 шт: термін постачання 21-31 дні (днів) |
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SIB456DK-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK SC-75 |
на замовлення 7503 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SIB456DK-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
на замовлення 60309 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.31 грн |
| 10+ | 33.44 грн |
| 100+ | 21.56 грн |
| 500+ | 15.42 грн |
| 1000+ | 13.87 грн |
| SIB456DK-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs PowerPAK SC-75
MOSFETs 100V Vds 20V Vgs PowerPAK SC-75
на замовлення 7503 шт:
термін постачання 21-30 дні (днів)



