SIDR140DP-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 25V 79A/100A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).