SIDR220DP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
| Кількість | Ціна |
|---|---|
| 3000+ | 76.40 грн |
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Технічний опис SIDR220DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc).
Інші пропозиції SIDR220DP-T1-GE3 за ціною від 84.50 грн до 236.26 грн
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SIDR220DP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 25V 87.7A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V |
на замовлення 5973 шт: термін постачання 21-31 дні (днів) |
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SIDR220DP-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 25V Vds 16V Vgs PowerPAK SO-8DC |
товару немає в наявності |