SIDR402EP-T1-RE3 Vishay Semiconductors
на замовлення 11850 шт:
термін постачання 287-296 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 173.15 грн |
10+ | 141.73 грн |
100+ | 98.06 грн |
250+ | 92.1 грн |
500+ | 91.44 грн |
Відгуки про товар
Написати відгук
Технічний опис SIDR402EP-T1-RE3 Vishay Semiconductors
Description: N-CHANNEL 40 V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc), Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8DC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V.
Інші пропозиції SIDR402EP-T1-RE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SIDR402EP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V |
товар відсутній |
||
SIDR402EP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 40 V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V |
товар відсутній |