SIDR500EP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 2+ | 298.07 грн |
| 10+ | 189.32 грн |
| 100+ | 133.90 грн |
| 500+ | 115.56 грн |
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Технічний опис SIDR500EP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SIDR500EP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SIDR500EP-T1-RE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SIDR500EP-T1-RE3 | Виробник : Vishay Semiconductors |
MOSFETs PPAKSO8 N-CH 30V 94A |
товару немає в наявності |