SIDR610DP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
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Технічний опис SIDR610DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) MOSFET, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V.
Інші пропозиції SIDR610DP-T1-RE3 за ціною від 76.18 грн до 219.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIDR610DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 200-V (D-S) MOSFET Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 5445 шт: термін постачання 21-31 дні (днів) |
|
| SIDR610DP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 200-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 5445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.17 грн |
| 10+ | 137.45 грн |
| 100+ | 95.42 грн |
| 500+ | 76.18 грн |