SIDR610EP-T1-RE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Технічний опис SIDR610EP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 39.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 150W, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAK SO-DC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0319ohm.
Інші пропозиції SIDR610EP-T1-RE3 за ціною від 105.00 грн до 321.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIDR610EP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 200 V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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SIDR610EP-T1-RE3 | Vishay |
MOSFETs SOT669 200V 39.6A N-CH MOSFET |
на замовлення 5425 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIDR610EP-T1-RE3 | VISHAY |
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 39.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 150W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO-DC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0319ohm |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIDR610EP-T1-RE3 | VISHAY |
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 39.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 150W SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAK SO-DC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0319ohm |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIDR610EP-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.21 грн |
| 10+ | 204.79 грн |
| 100+ | 145.38 грн |
| 500+ | 112.64 грн |
| 1000+ | 105.00 грн |
| SIDR610EP-T1-RE3 |
|
Виробник: Vishay
MOSFETs SOT669 200V 39.6A N-CH MOSFET
MOSFETs SOT669 200V 39.6A N-CH MOSFET
на замовлення 5425 шт:
термін постачання 21-30 дні (днів)
| SIDR610EP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 39.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 150W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO-DC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0319ohm
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 39.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 150W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO-DC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0319ohm
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
| SIDR610EP-T1-RE3 |
|
Виробник: VISHAY
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 39.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 150W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO-DC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0319ohm
Description: VISHAY - SIDR610EP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO-DC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 39.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 150W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAK SO-DC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0319ohm
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)