SIE810DF-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Tape & Reel (TR)
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Технічний опис SIE810DF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 10-PolarPAK® (L), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PolarPAK® (L), Packaging: Tape & Reel (TR).
Інші пропозиції SIE810DF-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
SIE810DF-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 60A 10POLARPAK Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: 10-PolarPAK® (L) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PolarPAK® (L) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIE810DF-T1-GE3 | Vishay / Siliconix |
MOSFET 20V 236A 125W 1.4mohm @ 10V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SIE810DF-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 60A 10POLARPAK
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 10-PolarPAK® (L)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PolarPAK® (L)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SIE810DF-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFET 20V 236A 125W 1.4mohm @ 10V
MOSFET 20V 236A 125W 1.4mohm @ 10V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.